PHOTOLUMINESCENCE OF ANODICALLY OXIDIZED POROUS SILICON

被引：10

作者：

FILIPPOV, VV ^{[1
]}

PERSHUKEVICH, PP ^{[1
]}

BONDARENKO, VP ^{[1
]}

DOROFEEV, AM ^{[1
]}

机构：

[1] MINSK RADIOENGN INST, MINSK 220600, BELARUS

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 1994年 / 184卷 / 02期

关键词：

D O I：

10.1002/pssb.2221840231

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A photoluminescence (PL) study is carried out on porous silicon (PS) layers of 50 to 60% porosity which are anodically oxidized in ethylenglycol-NH4NO3 electrolyte. Such oxidation is found to make the PL intensity stronger and the peak wavelength shorter. The emission of partially linearly polarized light is observed for PS samples under linearly polarized light excitation. Transmission IR and reflectance spectra are recorded to characterize porous silicon. As a result, a strong shift of the absorption band edge and high silicon oxide content are found in PS samples. This shift is supposed to be due to the quantum confinement mechanism, but the features of PL speak in favour of the important role of oxide in the light emission from PS. In particular, the polarization of the emitted light can be due to the oxide-induced elastic strains.

引用

页码：573 / 580

页数：8

共 50 条

[41] Fine structure of photoluminescence spectra from erbium incorporated with iron in oxidized porous silicon
Bondarenko, V
Kazuchits, N
Volchek, S
Dolgyi, L
Petrovich, V
Yakovtseva, V
Gaiduk, P
Balucani, M
Lamedica, G
Ferrari, A
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2003, 197 (02): : 441 - 445
[42] Effects of SO2 and I-2 on the photoluminescence of oxidized porous silicon
Kelly, MT
Bocarsly, AB
CHEMISTRY OF MATERIALS, 1997, 9 (07) : 1659 - 1664
[43] ANODICALLY GROWN POROUS SILICON STRUCTURE - FORMATION MECHANISMS
SOARES, DM
DOSSANTOS, MC
TESCHKE, O
CHEMICAL PHYSICS LETTERS, 1995, 242 (1-2) : 202 - 206
[44] Electroluminescence with high and stable quantum efficiency and low threshold voltage from anodically oxidized thin porous silicon diode
Gelloz, B
Koshida, N
JOURNAL OF APPLIED PHYSICS, 2000, 88 (07) : 4319 - 4324
[45] COMPARISON OF ANODICALLY ETCHED POROUS SILICON WITH SPARK-PROCESSED SILICON
HUMMEL, RE
LUDWIG, M
CHANG, SS
LATORRE, G
THIN SOLID FILMS, 1995, 255 (1-2) : 219 - 223
[46] Electrically induced luminescence quenching in p+-type and anodically oxidized n-type wet porous silicon
Gelloz, B. (bgelloz@cc.tuat.ac.jp), 1600, American Institute of Physics Inc. (94):
[47] Luminescent properties of an anodically oxidized P-doped silicon wafer
Kinki Univ in Kyushu, Fukuoka, Japan
Appl Surf Sci, (147-151):
[48] Electrically induced luminescence quenching in p+-type and anodically oxidized n-type wet porous silicon
Gelloz, B
Bsiesy, A
Herino, R
JOURNAL OF APPLIED PHYSICS, 2003, 94 (04) : 2381 - 2389
[49] Photoluminescence and photoluminescence excitation mechanisms for porous silicon and silicon oxynitride
Liu, XS
Calata, JN
Liang, HY
Shi, WZ
Lin, XY
Lin, KX
Qin, GG
OPTICAL MICROSTRUCTURAL CHARACTERIZATION OF SEMICONDUCTORS, 2000, 588 : 141 - 146
[50] Luminescent properties of an anodically oxidized P-doped silicon wafer
Iwaso, M
Arakawa, T
APPLIED SURFACE SCIENCE, 1996, 100 : 147 - 151

← 1 2 3 4 5 →