MEASUREMENT OF PB+ ION COLLECTION IN SI BY HIGH DEPTH-RESOLUTION RUTHERFORD BACKSCATTERING

被引：16
|
作者：
WILLIAMS, JS [1 ]
机构：
[1] UNIV SALFORD,DEPT ELECT ENGN,SALFORD M5 4WT,LANCASHIRE,ENGLAND
来源：
PHYSICS LETTERS A | 1975年 / A 51卷 / 02期
关键词：
D O I：
10.1016/0375-9601(75)90235-2
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：85 / 86
页数：2
相关论文
共 50 条
  • [31] High-Resolution Rutherford Backscattering Analysis of Nanoscale Thin Films
    LaRose, J. D.
    Huang, M.
    Bersch, E.
    Di, M.
    Diebold, A. C.
    Consiglio, S.
    Clark, R. D.
    Leusink, G. J.
    FRONTIERS OF CHARACTERIZATION AND METROLOGY FOR NANOELECTRONICS: 2009, 2009, 1173 : 80 - +
  • [32] HIGH-RESOLUTION RUTHERFORD BACKSCATTERING SPECTROMETRY OF METAL SILICON INTERFACES
    VANDERVEEN, JF
    VANLOENEN, EJ
    SURFACE SCIENCE, 1986, 168 (1-3) : 701 - 712
  • [33] COMPOUND SEMICONDUCTORS SURFACE CHARACTERIZATION BY HIGH-RESOLUTION RUTHERFORD BACKSCATTERING
    HAGEALI, M
    SIFFERT, P
    NUCLEAR INSTRUMENTS & METHODS, 1979, 166 (03): : 411 - 418
  • [34] High accuracy traceable Rutherford backscattering spectrometry of ion implanted samples
    Colaux, J. L.
    Jeynes, C.
    ANALYTICAL METHODS, 2014, 6 (01) : 120 - 129
  • [35] Depth dependence of the tetragonal distortion of a GaN layer on Si(111) studied by Rutherford backscattering/channeling
    Wu, MF
    Chen, CC
    Zhu, DZ
    Zhou, SQ
    Vantomme, A
    Langouche, G
    Zhang, BS
    Yang, H
    APPLIED PHYSICS LETTERS, 2002, 80 (22) : 4130 - 4132
  • [36] Enhanced depth-resolution analysis with medium energy ion scattering (MEIS) for shallow junction profiling
    Tajima, J
    Park, YK
    Fujita, M
    Takai, M
    Schork, R
    Frey, L
    Ryssel, H
    2000 INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY, PROCEEDINGS, 2000, : 604 - 606
  • [37] INITIAL-STAGE OF AG GROWTH ON SI(001) STUDIED BY HIGH-RESOLUTION RUTHERFORD-BACKSCATTERING SPECTROSCOPY
    KIMURA, K
    OHSHIMA, K
    MANNAMI, MH
    PHYSICAL REVIEW B, 1995, 52 (08): : 5737 - 5742
  • [38] Studies of the thin oxide of epitaxial SiGe/Si film by high resolution grazing angle rutherford backscattering Spectrometry and channeling
    Chen, ChangChun
    Liu, Jiangfeng
    Yu, BenHai
    Zhu, DeZhang
    ELECTRONIC MATERIALS LETTERS, 2007, 3 (02) : 63 - 67
  • [39] High-resolution Rutherford backscattering spectroscopy for Nano-CMOS applications
    Kimura, Kenji
    Ming, Zhao
    Nakajima, Kaoru
    Suzuki, Motofumi
    2006 INTERNATIONAL WORKSHOP ON NANO CMOS, PROCEEDINGS, 2006, : 89 - 109
  • [40] Manganese depth-concentration profiles in ion-implanted silicon studied by Rutherford backscattering
    B. É. Égamberdiev
    M. Yu. Adylov
    Technical Physics Letters, 2001, 27 : 168 - 170
12345