共 50 条
- [1] DETERMINATION OF OPTIMUM DEPTH-RESOLUTION CONDITIONS FOR RUTHERFORD BACKSCATTERING ANALYSIS NUCLEAR INSTRUMENTS & METHODS, 1978, 157 (02): : 213 - 221
- [2] APPLICATION OF HIGH-RESOLUTION RUTHERFORD BACKSCATTERING TO MEASUREMENT OF ION RANGES IN SI AND A1 RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1975, 25 (01): : 55 - 56
- [3] High depth resolution Rutherford backscattering analysis of Si-Si0.78Ge0.22/(0 0 1)Si superlattices Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1998, 139 (1-4): : 239 - 243
- [4] High depth resolution Rutherford backscattering analysis of Si-Si0.78Ge0.22/(0 0 1)Si superlattices NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1998, 139 (1-4): : 239 - 243
- [5] OPTIMIZATION OF A RUTHERFORD BACKSCATTERING GEOMETRY FOR ENHANCED DEPTH RESOLUTION NUCLEAR INSTRUMENTS & METHODS, 1975, 126 (02): : 205 - 215
- [8] Oxidation of Si(001) surfaces studied by high-resolution rutherford backscattering spectroscopy JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (7B): : 4481 - 4482
- [9] Oxidation of Si(001) surfaces studied by high-resolution Rutherford backscattering spectroscopy Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2000, 39 (7 B): : 4481 - 4482
- [10] Formation of iron silicide on Si(001) studied by high resolution Rutherford backscattering spectroscopy Suzuki, M. (m-snki@kues.kyoto-u.ac.jp), 1600, (Elsevier):