NOVEL TRANSPORT EFFECTS IN HIGH-BIAS BALLISTIC-ELECTRON-EMISSION SPECTROSCOPY

被引：51
|
作者：
LUDEKE, R
机构：
[1] IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598
来源：
PHYSICAL REVIEW LETTERS | 1993年 / 70卷 / 02期
关键词：
D O I：
10.1103/PhysRevLett.70.214
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Pronounced structure at large biases in the ballistic-electron-emission-microscopy current for Cr/GaP(110) is attributed to density-of-states effects in GaP. Quasielastic scattering at the Cr-GaP interface appears vital for the effect. Impact ionization in the GaP is invoked to explain the unusually large collector currents that can exceed the injected STM tip current.
引用
收藏
页码：214 / 217
页数：4
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