SINGLE-ELECTRON TUNNELING UP TO ROOM-TEMPERATURE

被引：39
|
作者：
SCHONENBERGER, C
VANHOUTEN, H
DONKERSLOOT, HC
VANDERPUTTEN, AMT
FOKKINK, LGJ
机构：
[1] Philips Research Laboratories, Eindhoven, 5600
来源：
PHYSICA SCRIPTA | 1992年 / T45卷
关键词：
D O I：
10.1088/0031-8949/1992/T45/062
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Ultrasmall (less than or similar to 5 nm in lateral diameter) double-barrier tunnel junctions have been realized using metal particles (2-5 nm in diameter) sandwiched in between a metallic substrate and the metallic tip of a scanning tunneling microscope (STM). The particles were either grown by e-beam evaporation or prepared using colloid chemistry. Two electrical transport effects, in good agreement with the semi-classical theory of single-electron tunneling, have been found at room temperature: the Coulomb gap and the Coulomb staircase. The interpretation in terms of single-electron tunneling is further supported by liquid Helium temperature STM measurements on identical samples.
引用
收藏
页码：289 / 291
页数：3
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