PICOSECOND ABSORPTION DYNAMICS OF PHOTOEXCITED INGAP EPITAXIAL-FILMS

被引：13
|
作者：
THIAGARAJAN, P [1 ]
SCHMERGE, JF [1 ]
MENONI, CS [1 ]
MARCONI, M [1 ]
MARTINEZ, OE [1 ]
ROCCA, JJ [1 ]
HAFICH, MJ [1 ]
LEE, HY [1 ]
ROBINSON, GY [1 ]
机构：
[1] COLORADO STATE UNIV,CTR OPTOELECTR COMP SYST,FT COLLINS,CO 80523
来源：
APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 01期
关键词：
D O I：
10.1063/1.105533
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The absorption recovery of a photoexcited InGaP epitaxial film 0.4-mu-m thick was investigated using the pump-probe laser technique and found to have a time constant of 55 ps at room temperature. Measurements done in the temperature range of 300-50 K show the decay of the photoexcited carrier distribution to be dominated by ambipolar diffusion and surface recombination. The measured absorption recovery time constant corresponds to an ambipolar diffusion coefficient D > 2.8 cm2/s and a surface recombination velocity of S > 4 X 10(5) cm/s at room temperature.
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页码：90 / 92
页数：3
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