PICOSECOND ABSORPTION DYNAMICS OF PHOTOEXCITED INGAP EPITAXIAL-FILMS

被引：13

作者：

THIAGARAJAN, P ^{[1
]}

SCHMERGE, JF ^{[1
]}

MENONI, CS ^{[1
]}

MARCONI, M ^{[1
]}

MARTINEZ, OE ^{[1
]}

ROCCA, JJ ^{[1
]}

HAFICH, MJ ^{[1
]}

LEE, HY ^{[1
]}

ROBINSON, GY ^{[1
]}

机构：

[1] COLORADO STATE UNIV,CTR OPTOELECTR COMP SYST,FT COLLINS,CO 80523

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 01期

关键词：

D O I：

10.1063/1.105533

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The absorption recovery of a photoexcited InGaP epitaxial film 0.4-mu-m thick was investigated using the pump-probe laser technique and found to have a time constant of 55 ps at room temperature. Measurements done in the temperature range of 300-50 K show the decay of the photoexcited carrier distribution to be dominated by ambipolar diffusion and surface recombination. The measured absorption recovery time constant corresponds to an ambipolar diffusion coefficient D > 2.8 cm2/s and a surface recombination velocity of S > 4 X 10(5) cm/s at room temperature.

引用

页码：90 / 92

页数：3

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