THE ROLE OF GROUP-V IMPURITIES IN DEFECT FORMATION IN IRRADIATED SILICON

Direct experimental evidence is provided on the involvement of phosphorus in the structure of the defect that is associated with a prominent electron trap at Ec −0.42eV (Ec is the conduction band edge) in irradiated n‐type silicon. Possible vacancy participation in the formation of the same defect is inferred from the defect production in float‐zone und Czochralski‐grown material. However, it may not be concluded from this study whether a single phosphorus atom and a single vacancy (i.e. the E‐centre) are the only defect constituents. Similar conclusions are also arrived at for an electron trap observed at Ec −0.30eV. These two traps are metastable, a property observed here only in phosphorus‐related defects. Electron traps at Ec −0.34 eV and Ec −0.51 eV are associated with defects containing arsenic and antimony, respectively. Copyright © 1990 WILEY‐VCH Verlag GmbH & Co. KGaA