共 50 条
- [1] TEMPERATURE-DEPENDENCE OF FORBIDDEN BAND WIDTH OF IN1-XGAXP SOLID-SOLUTIONS WITH X =] 0.5 SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (05): : 590 - 591
- [2] RECOMBINATION RADIATION EMITTED BY A1 XGA1-XAS SOLID SOLUTIONS WITH A FORBIDDEN-BAND WIDTH GRADIENT SOVIET PHYSICS SEMICONDUCTORS-USSR, 1969, 3 (04): : 460 - &
- [3] DEPENDENCE OF FORBIDDEN-BAND WIDTH ON COMPOSITION OF ALXGA1-XSB SOLID-SOLUTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (08): : 913 - 915
- [4] TEMPERATURE-DEPENDENCE OF GAP WIDTH IN SOLID-SOLUTIONS OF MERCURY AND CADMIUM TELLURIDES SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (11): : 1276 - 1277
- [5] TEMPERATURE DEPENDENCE OF FORBIDDEN-BAND WIDTH IN PBTEXSE1-X SOLID SOLUTIONS SOVIET PHYSICS SOLID STATE,USSR, 1968, 10 (05): : 1239 - +
- [7] DEPENDENCE OF FORBIDDEN BAND WIDTH OF BI-SB SEMICONDUCTING SOLID-SOLUTIONS ON ANTIMONY CONCENTRATION SOVIET PHYSICS SEMICONDUCTORS-USSR, 1976, 10 (12): : 1332 - 1334
- [8] DIFFUSION, SOLUBILITY, AND CHARGE STATE OF ZINC IN AL-XGA-1-XAS EPITAXIAL SOLID-SOLUTION FILMS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (05): : 545 - 547
- [10] DEPENDENCE OF THE FORBIDDEN BAND WIDTH ON THE COMPOSITION OF AlxGa1 - xSb SOLID SOLUTIONS. 1977, 11 (08): : 913 - 915