DEPENDENCE OF THE FORBIDDEN BAND WIDTH ON THE COMPOSITION OF AlxGa1 - xSb SOLID SOLUTIONS.

被引：0

作者：

Biryulin, Yu.F.

Vul', S.P.

Dedegkaev, T.T.

Kryukov, I.I.

Polyanskaya, T.A.

Shmartsev, Yu.V.

机构：

来源：

| 1977年 / 11卷 / 08期

关键词：

Compendex;

D O I：

暂无

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学科分类号：

摘要：

SEMICONDUCTING ALUMINUM COMPOUNDS

引用

页码：913 / 915

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[1] DEPENDENCE OF FORBIDDEN-BAND WIDTH ON COMPOSITION OF ALXGA1-XSB SOLID-SOLUTIONS
BIRYULIN, YF
VUL, SP
DEDEGKAEV, TT
KRYUKOV, II
POLYANSKAYA, TA
SHMARTSEV, YV
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (08): : 913 - 915
[2] PHOTOLUMINESCENCE INVESTIGATION OF THE COMPOSITION DEPENDENCE OF THE PARAMETERS OF VARIABLE-GAP AlxGa1 - x As SOLID SOLUTIONS.
Bazyk, A.I.
Kovalenko, V.F.
Peka, G.P.
Petryakov, V.A.
Soviet physics. Semiconductors, 1981, 15 (07): : 786 - 789
[3] INVESTIGATION OF THE CATHODOLUMINESCENCE OF VARIABLE-COMPOSITION AlxGa1 - xAs SOLID SOLUTIONS.
Dryapiko, N.K.
Peka, G.P.
Chumak, S.M.
Soviet physics. Semiconductors, 1983, 17 (11): : 1284 - 1286
[4] INVESTIGATION OF THE DIFFUSION LENGTH IN VARIABLE-GAP AlxGa1 - xAs SOLID SOLUTIONS.
Kesamanly, F.P.
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Peka, G.P.
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1978, 12 (07): : 780 - 782
[5] TEMPERATURE DEPENDENCE OF FORBIDDEN-BAND WIDTH IN PBTEXSE1-X SOLID SOLUTIONS
DEVYATKO.ED
SAAKYAN, VA
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[6] COMPOSITION DEPENDENCE OF THE OSCILLATOR STRENGTH OF OPTICAL-TRANSITIONS IN ALXGA1-XSB SOLID-SOLUTIONS
SOCHILINA, IN
UKHANOV, YI
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (05): : 602 - 603
[7] THE DEPENDENCE OF THE WIDTH OF THE FORBIDDEN ZONE ON THE COMPOSITION IN THE SOLID SOLUTIONS CDS-CDSE
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RYVKIN, SM
AGEEVA, IN
SOVIET PHYSICS-TECHNICAL PHYSICS, 1958, 3 (03): : 453 - 455
[8] COMPOSITION DEPENDENCE OF ALXGA1-XSB ENERGY GAPS
BEDAIR, SM
JOURNAL OF APPLIED PHYSICS, 1976, 47 (09) : 4145 - 4147
[9] PHOTOLUMINESCENCE OF ALXGA-1-XSB SOLID-SOLUTIONS
BIRYULIN, YF
VUL, SP
SHMARTSEV, YV
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (11): : 1427 - 1428
[10] TEMPERATURE-DEPENDENCE OF FORBIDDEN BAND WIDTH OF IN1-XGAXP SOLID-SOLUTIONS WITH X =] 0.5
VOLKOV, LA
KOVALENKO, VF
MARONCHUK, IE
SHEPEL, LG
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (05): : 590 - 591

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