INGAAS/ALGAAS RIDGE WAVE-GUIDE LASERS UTILIZING AN INGAP ETCH-STOP LAYER

被引：7
|
作者：
HOBSON, WS
CHEN, YK
WU, MC
机构：
[1] AT and T Bell Labs., Murray Hill, NJ
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 11期
关键词：
D O I：
10.1088/0268-1242/7/11/024
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An InGaP etch-stop layer was used to control the mesa height in a ridge waveguide InGaAs/AlGaAs strained multiple quantum well laser grown by organometallic vapour phase epitaxy. These 950 nm lasers exhibited internal quantum efficiencies of eta(i) = 0.99 and very low internal losses of alpha(i) = 2.6 cm-1. For a cavity length of 500 mum, a threshold current of 12 mA was obtained. The high performance of these lasers and the improved uniformity of their characteristics demonstrate the utility of InGaP etch-stop layers in improving process yield without detrimental effects.
引用
收藏
页码：1425 / 1427
页数：3
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