DETERMINING CARRIER LIFETIME USING FREQUENCY-DEPENDENCE IN CONTACTLESS PHOTOELECTROMAGNETIC INVESTIGATIONS OF SEMICONDUCTORS

被引：3

作者：

LONCIERZ, B ^{[1
]}

MURRI, R ^{[1
]}

NOWAK, M ^{[1
]}

机构：

[1] UNIV CAMERINO, DIPARTIMENTO MATEMAT & FIS, I-62032 CAMERINO, ITALY

来源：

THIN SOLID FILMS | 1995年 / 266卷 / 02期

关键词：

CARRIER LIFETIME; SEMICONDUCTORS; PHOTOELECTROMAGNETIC EFFECT;

D O I：

10.1016/0040-6090(96)80033-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A new contactless method of determining the carrier lifetime in semiconductors is presented. It uses the dependence of the magnetic field evoked by photoelectromagnetic current in an illuminated semiconductor placed in an external magnetic field on the frequency of chopping the illumination intensity. This method was used to determine the electron lifetime in p-type crystalline silicon. It is suitable for rapid and simple inspection of a semiconductor wafer for laboratory and industrial purposes. The using of this method in investigations of superlattices and multi-quantum wells is proposed.

引用

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页码：274 / 277

页数：4

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