STRESS-FREE GAAS ON SI BY LASER-PULSE IRRADIATION

被引：1

作者：

UMENO, M

SOGA, T

JIMBO, T

机构：

[1] Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Showa-ku, Nagoya, 466, Gokiso-cho

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1992年 / 31卷 / 04期

关键词：

GAAS-ON-SI; STRESS; LASER PULSE IRRADIATION; YAG LASER; MOCVD;

D O I：

10.1143/JJAP.31.1189

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A novel method to relieve the stress in GaAs on a Ge-coated Si substrate using YAG (Yttrium Aluminum Garnet) laser pulse irradiation (the wavelength is 1.064-mu-m) is described. The stress decreases with increasing number of shots or shortening pulse width while keeping pulse energy per shot constant. The residual stress in the GaAs on Si after irradiation of 5 shots of the laser pulse (the pulse width is 2 ns and pulse energy is 0.36 J/pulse) is almost zero.

引用

页码：1189 / 1190

页数：2

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