SILICON EPITAXIAL-GROWTH ON GERMANIUM USING AN SI2H6 LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION TECHNIQUE

被引：8
|
作者：
FUJINAGA, K
TAKAHASHI, Y
ISHII, H
HIROTA, S
KAWASHIMA, I
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 02期
关键词：
D O I：
10.1116/1.584721
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：225 / 228
页数：4
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