Effect of defects on the electronic properties of WS2 armchair nanoribbon

被引：2
|
作者：
Ghosh, Bahniman [1 ,2 ]
Gupta, Aayush [2 ]
机构：
[1] Univ Texas Austin, Microelect Res Ctr, 10100 Burnet Rd,Bldg 160, Austin, TX 78758 USA
[2] Indian Inst Technol Kanpur, Dept Elect Engn, Kanpur 208016, Uttar Pradesh, India
来源：
JOURNAL OF SEMICONDUCTORS | 2015年 / 36卷 / 01期
关键词：
WS2 armchair nanoribbon; electronic property;
D O I：
10.1088/1674-4926/36/1/013003
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
We have studied the WS2 armchair nanoribbon with various defects like vacancy, edge roughness, twist, turn and ripple and compared how the bandgap changes due to such defects with the bandgap of a nanoribbon with no defects. Materials like WS2 and other transition metal dichalcogenides (MX2) have a graphene like layered structure with hexagonal rings and have properties that have attracted a lot of interest. Hence it is essential to study the changes in the band structure of the nanoribbon of WS2 due to the inclusion of defects like vacancy, rough edge, wrap, ripple and twist for making any device based on WS2.
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页数：4
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