PRECISE NONSELECTIVE CHEMICALLY ASSISTED ION-BEAM ETCHING OF ALGAAS GAAS BRAGG REFLECTORS BY IN-SITU LASER REFLECTOMETRY

被引：9

作者：

YOO, JY ^{[1
]}

SHIN, JH ^{[1
]}

LEE, YH ^{[1
]}

PARK, HH ^{[1
]}

YOO, BS ^{[1
]}

机构：

[1] ELECTR & TELECOMMUN RES INST,TAEJON 305600,SOUTH KOREA

来源：

OPTICAL AND QUANTUM ELECTRONICS | 1995年 / 27卷 / 05期

关键词：

D O I：

10.1007/BF00563578

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Precision etch-depth control is realized by a chemically assisted ion-beam etching system incorporated with in situ laser reflectometry. By counting the number of interference fringes, etch-depth control better than a quarter-wave thickness is easily obtained. Optimized etching conditions for highly anisotropic etching of bulk GaAs and AlGaAs/GaAs distributed Bragg reflectors are obtained. With the ability to etch-stop just below the active region by the in situ monitoring, InGaAs vertical-cavity surface-emitting lasers with CW threshold current density as low as 380 A cm-2 with output power > 11 mW are fabricated. Spatial uniformity is 5% over a 1-cm2 sample, which corresponds to one pair over 20 pairs of quarter-wave stacks of AlGaAs/GaAs distributed Bragg reflectors.

引用

页码：421 / 425

页数：5

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