STUDY OF SURFACE ELECTRONIC-STRUCTURE OF SI(111)-GA BY RESONANT OPTICAL 2ND HARMONIC-GENERATION

被引：23
|
作者：
KELLY, PV
OMAHONY, JD
MCGILP, JF
RASING, T
机构：
[1] CATHOLIC UNIV NIJMEGEN, MAT RES INST, 6525 ED NIJMEGEN, NETHERLANDS
[2] UNIV DUBLIN TRINITY COLL, DEPT PURE & APPL PHYS, DUBLIN 2, IRELAND
来源：
SURFACE SCIENCE | 1992年 / 269卷
关键词：
D O I：
10.1016/0039-6028(92)91360-N
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The epitaxial growth of Ga on Si(111) has been studied in situ by optical second harmonic generation (SHG). Enhanced intensity near 1/3 of a monolayer was observed. By measuring both intensity and absolute phase of the SHG signals, this enhancement can be unambiguously related to electronic resonances of the Si(111)square-root 3 X square-root 3-Ga structure.
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页码：849 / 853
页数：5
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