ANALYSIS OF ARSENIC AND PHOSPHORUS ION-IMPLANTED SILICON BY SPECTROSCOPIC ELLIPSOMETRY

被引：9
|
作者：
CORTOT, JP [1 ]
GED, P [1 ]
机构：
[1] CTR NATL ETUDES TELECOMMUN,CTR NORBERT SEGARD,F-38420 MEYLAN,FRANCE
来源：
APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 01期
关键词：
D O I：
10.1063/1.93301
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：93 / 95
页数：3
相关论文
共 50 条
  • [1] ANALYSIS OF ION-IMPLANTED GAAS BY SPECTROSCOPIC ELLIPSOMETRY
    ERMAN, M
    THEETEN, JB
    SURFACE SCIENCE, 1983, 135 (1-3) : 353 - 373
  • [2] ION-IMPLANTED ARSENIC IN SILICON
    LARSEN, AN
    CHRISTENSEN, B
    CHRISTENSEN, PH
    SHIRYAEV, SY
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 80-1 : 697 - 701
  • [3] Infrared spectroscopic ellipsometry studies of ion-implanted and annealed silicon wafers
    Liu Xian-Ming
    Li Bin-Cheng
    Gao Wei-Dong
    Han Yan-Ling
    ACTA PHYSICA SINICA, 2010, 59 (03) : 1632 - 1637
  • [4] MULTILAYER ANALYSIS OF ION-IMPLANTED GAAS USING SPECTROSCOPIC ELLIPSOMETRY
    ERMAN, M
    THEETEN, JB
    SURFACE AND INTERFACE ANALYSIS, 1982, 4 (03) : 98 - 108
  • [5] CHARACTERIZATION OF ION-IMPLANTED SILICON BY ELLIPSOMETRY AND CHANNELING
    LOHNER, T
    MEZEY, G
    KOTAI, E
    PASZTI, F
    MANUABA, A
    GYULAI, J
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH, 1983, 209 (MAY): : 615 - 620
  • [6] THE ION-IMPLANTED ARSENIC TAIL IN SILICON
    BECK, SE
    JACCODINE, RJ
    CLARK, C
    ION BEAM PROCESSING OF ADVANCED ELECTRONIC MATERIALS, 1989, 147 : 73 - 78
  • [7] DIFFUSION OF ION-IMPLANTED ARSENIC IN SILICON
    FAIR, RB
    TSAI, JCC
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (08) : C258 - C258
  • [8] DIFFUSION OF ION-IMPLANTED ARSENIC IN SILICON
    FAIR, RB
    TSAI, JCC
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (12) : 1689 - 1696
  • [9] SPECTROSCOPIC ELLIPSOMETRY FOR DEPTH PROFILING OF ION-IMPLANTED MATERIALS
    VANHELLEMONT, J
    ROUSSEL, P
    MAES, HE
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 55 (1-4): : 183 - 187
  • [10] DIFFUSION OF ION-IMPLANTED PHOSPHORUS IN SILICON
    CHELYADINSKII, AR
    TAHER, HIH
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1994, 142 (02): : 331 - 338
12345