THE ION-IMPLANTED ARSENIC TAIL IN SILICON

被引：1
|
作者：
BECK, SE
JACCODINE, RJ
CLARK, C
机构：
来源：
ION BEAM PROCESSING OF ADVANCED ELECTRONIC MATERIALS | 1989年 / 147卷
关键词：
D O I：
10.1557/PROC-147-73
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：73 / 78
页数：6
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