Coaxial Probe Fixture Used for Complex Permittivity Measurement of Thin Layers

The use of new materials in recent times constitutes an alternative to solve some of the problems of electronics. A good knowledge of the parameters of electrical is needed. For these reasons, we have developed a broad-band technique for measuring the complex relative permittivity (epsilon*) of dielectric materials, especially the thin layers. Our method is based on the use of a coaxial probe ending to a trough. The extraction of the complex permittivity uses a capacitance model associated with metal losses correction. There is several advantages which result from this approach such as measurement simplicity. The dielectric is directly placed in the slit with its short dimensions which naturally reduces the impact of the metal. The same is true for the lithography. This method covers easily the bandwidth between 0.5 and 11 GHz according to the dimensions considered.