DEFECT TRAPPING OF ION-IMPLANTED DEUTERIUM IN NICKEL

被引：110
|
作者：
BESENBACHER, F [1 ]
BOTTIGER, J [1 ]
MYERS, SM [1 ]
机构：
[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87185
来源：
JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 05期
关键词：
D O I：
10.1063/1.331132
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：3536 / 3546
页数：11
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