HYDROGEN-RELATED LUMINESCENCE-CENTERS IN THERMALLY TREATED CZOCHRALSKI SILICON

被引：23

作者：

LIGHTOWLERS, EC ^{[1
]}

NEWMAN, RC ^{[1
]}

TUCKER, JH ^{[1
]}

机构：

[1] UNIV LONDON IMPERIAL COLL SCI TECHNOL & MED,BLACKETT LAB,INTERDISCIPLINARY RES CTR SEMICOND MAT,LONDON SW7 2BZ,ENGLAND

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1994年 / 9卷 / 07期

关键词：

D O I：

10.1088/0268-1242/9/7/013

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The I-line (0.9650 eV), T-line (0.9351 eV) and several other luminescence centres created by annealing Czochralski silicon at 450-degrees-C are all shown to incorporate one hydrogen atom, from observed deuterium-hydrogen isotope structure, and mainly one carbon atom deduced from carbon isotope structure. It is also demonstrated that hydrogen is a common contaminant in silicon and that it can be readily introduced by thermal treatments at 450-degrees-C in the presence of water vapour or gaseous hydrogen. With increasing hydrogen content, the luminescence from the centres decreases, implying that if more than one hydrogen atom is captured by a centre it becomes optically inactive.

引用

页码：1370 / 1374

页数：5

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