ELECTRIC-FIELD-MODULATED REFLECTANCE OF BAND-GAP EXCITON REGION OF GTE

被引:6
|
作者
BURATTINI, E
GRANDOLFO, M
RANGHIASCI, C
机构
[1] UNIV ROME,IST FIS,ROME,ITALY
[2] UNIV ROME,IST SUPER SANITA,LAB FIS,ROME,ITALY
[3] CNR,GRP NAZL STRUTTURA MAT,ROME,ITALY
来源
PHYSICAL REVIEW B | 1975年 / 12卷 / 02期
关键词
D O I
10.1103/PhysRevB.12.664
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:664 / 668
页数:5
相关论文
共 50 条
  • [21] Reflectance properties of two-dimensional sonic band-gap crystals
    Sanchis, L
    Cervera, F
    Sánchez-Dehesa, J
    Sánchez-Pérez, JV
    Rubio, C
    Martínez-Sala, R
    JOURNAL OF THE ACOUSTICAL SOCIETY OF AMERICA, 2001, 109 (06): : 2598 - 2605
  • [22] Tunable band-gap of the GeC monolayer by strain and electric field: A first-principles study
    Luo, M.
    Xu, Y. E.
    OPTIK, 2019, 195
  • [23] ELECTRON-TRANSPORT IN A HIGH ELECTRIC-FIELD FOR SOME WIDE BAND-GAP SEMICONDUCTORS
    FERRY, DK
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1975, 20 (03): : 404 - 404
  • [24] ELECTRIC-FIELD-MODULATED PHOTON-ECHOES IN PR-3+-YALO3
    MACFARLANE, RM
    MEIXNER, AJ
    OPTICS LETTERS, 1994, 19 (13) : 987 - 989
  • [25] FIELD-EMISSION FROM BAND-GAP STATES
    KOLAR, M
    DAVISON, SG
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (02): : 392 - 397
  • [26] Degradation of wide band-gap electrolumienscent materials by exciton-polaron interactions
    Aziz, Hany
    Wang, Qi
    ORGANIC LIGHT EMITTING MATERIALS AND DEVICES XIX, 2015, 9566
  • [27] WANNIER EXCITON IN AN ELECTRIC FIELD .2. ELECTROABSORPTION IN DIRECT-BAND-GAP SOLIDS
    BLOSSEY, DF
    PHYSICAL REVIEW B, 1971, 3 (04): : 1382 - &
  • [28] REFLECTANCE AND ABSORPTION-SPECTRA NEAR THE BAND-GAP IN CUINSE2
    RINCON, C
    GONZALEZ, J
    PEREZ, GS
    SOLID STATE COMMUNICATIONS, 1983, 48 (12) : 1001 - 1002
  • [29] Band-gap Modification in a Nanoscale Region of Polyethylene by Fast Electrons
    Kim, Hansoo
    CHEMPHYSCHEM, 2009, 10 (02) : 442 - 447
  • [30] EFFECT OF BAND-GAP NARROWING ON THE BUILT-IN ELECTRIC-FIELD IN N-TYPE SILICON
    GEIST, J
    LOWNEY, JR
    JOURNAL OF APPLIED PHYSICS, 1981, 52 (02) : 1121 - 1123