EPITAXIAL-GROWTH AND SURFACE-STRUCTURE OF (0001) BE ON (111) SI

We report the growth of epitaxial single-crystal (0001) hcp-Be on (111) Si substrates using molecular beam epitaxy. The Be is oriented with Be[1010BAR]\\Si[110] and Be[1120BAR]\\Si[211]. Crystalline quality improves with increasing deposition temperature T, where T = 100, 200, 300, 400, and 500-degrees-C for the results reported here. The films deposited at T less-than-or-equal-to 300-degrees-C are smooth while those deposited at T greater-than-or-equal-to 400-degrees-C are rough. A superstructure was observed on the surface, probably square-root 3 X square-root 3, R30-degrees, for films grown at T = 300-degrees-C. These epitaxial beryllium films are of much better quality than those we previously reported on alpha-Al2O3.