INTERFACE EFFECTS IN DISSOLUTION OF SILICON INTO THIN GOLD-FILMS

被引:12
|
作者
SANKUR, H [1 ]
MCCALDIN, JO [1 ]
机构
[1] CALTECH, PASADENA, CA 91109 USA
关键词
D O I
10.1149/1.2134261
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
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页码:565 / 569
页数:5
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