INTERFACE EFFECTS IN DISSOLUTION OF SILICON INTO THIN GOLD-FILMS

被引：12
|
作者：
SANKUR, H [1 ]
MCCALDIN, JO [1 ]
机构：
[1] CALTECH, PASADENA, CA 91109 USA
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1975年 / 122卷 / 04期
关键词：
D O I：
10.1149/1.2134261
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：565 / 569
页数：5
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