INJECTION AND REMOVAL OF IONIC CHARGE AT ROOM-TEMPERATURE THROUGH INTERFACE OF AIR WITH SIO2

被引：37
|
作者：
WOODS, MH [1 ]
WILLIAMS, R [1 ]
机构：
[1] RCA LABS, PRINCETON, NJ 08540 USA
来源：
JOURNAL OF APPLIED PHYSICS | 1973年 / 44卷 / 12期
关键词：
D O I：
10.1063/1.1662186
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：5506 / 5510
页数：5
相关论文
共 50 条
  • [31] Scanning capacitance microscope study of a SiO2/Si interface modified by charge injection
    Tomiye, H
    Yao, T
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1998, 66 (Suppl 1): : S431 - S434
  • [32] Glucose biosensor based on the room-temperature phosphorescence of TiO2/SiO2 nanocomposite
    Li, Yang
    Liu, Xiaoyan
    Yuan, Hongyan
    Xiao, Dan
    BIOSENSORS & BIOELECTRONICS, 2009, 24 (12): : 3706 - 3710
  • [33] INTERFACE CHARGE AND BULK TRAPPED CHARGE IN SIO2 FILMS
    OTA, Y
    BUTLER, SR
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1973, 18 (04): : 584 - 584
  • [34] A platinum ensemble catalyst for room-temperature removal of formaldehyde in the air
    Vikrant, Kumar
    Chung, Myoung Won
    Boukhvalov, Danil W.
    Heynderickx, Philippe M.
    Kim, Ki-Hyun
    Weon, Seunghyun
    CHEMICAL ENGINEERING JOURNAL, 2023, 475
  • [35] THE REMOVAL OF OXIDE IMPURITIES FROM ROOM-TEMPERATURE HALOGENOALUMINATE IONIC LIQUIDS
    ABDULSADA, AK
    AVENT, AG
    PARKINGTON, MJ
    RYAN, TA
    SEDDON, KR
    WELTON, T
    JOURNAL OF THE CHEMICAL SOCIETY-CHEMICAL COMMUNICATIONS, 1987, (21) : 1643 - 1644
  • [36] HIGH-TEMPERATURE SIO2 DECOMPOSITION AT THE SIO2/SI INTERFACE
    TROMP, R
    RUBLOFF, GW
    BALK, P
    LEGOUES, FK
    VANLOENEN, EJ
    PHYSICAL REVIEW LETTERS, 1985, 55 (21) : 2332 - 2335
  • [37] HIGH-TEMPERATURE DECOMPOSITION OF SIO2 AT THE SI/SIO2 INTERFACE
    RUBLOFF, GW
    TROMP, RM
    VANLOENEN, EJ
    BALK, P
    LEGOUES, FK
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03): : 1024 - 1025
  • [38] POSTIRRADIATION FORMATION OF SI-SIO2 INTERFACE STATES IN A HYDROGEN ATMOSPHERE AT ROOM-TEMPERATURE
    MRSTIK, BJ
    JOURNAL OF ELECTRONIC MATERIALS, 1991, 20 (08) : 627 - 633
  • [39] POINT-DEFECTS IN CRYSTALLINE SIO2 - THERMALLY STIMULATED LUMINESCENCE ABOVE ROOM-TEMPERATURE
    JANI, MG
    HALLIBURTON, LE
    KOHNKE, EE
    JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) : 6321 - 6328
  • [40] ROOM-TEMPERATURE TRANSFORMATIONS INDUCED IN SIO2 LAYERS BY CHEMICAL-COMPOUNDS .1.
    BARNA, A
    NEMETHSALLAY, M
    SZEP, IC
    DIDENKO, PI
    LITOVCHENKO, VG
    MARCHENKO, PI
    ROMANOVA, GF
    THIN SOLID FILMS, 1978, 55 (03) : 355 - 360
12345