CHARACTERIZATION OF SI/SIO2 INTERFACE DEFECTS BY ELECTRON-SPIN RESONANCE

被引：165
|
作者：
POINDEXTER, EH
CAPLAN, PJ
机构：
来源：
PROGRESS IN SURFACE SCIENCE | 1983年 / 14卷 / 03期
关键词：
D O I：
10.1016/0079-6816(83)90006-0
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：201 / 294
页数：94
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