Chemical vapor deposition of B-doped polycrystalline diamond films: Growth rate and incorporation efficiency of dopants

被引：24

作者：

Gonon, P ^{[1
]}

Deneuville, A ^{[1
]}

Fontaine, F ^{[1
]}

Gheeraert, E ^{[1
]}

Campargue, A ^{[1
]}

Chenevier, M ^{[1
]}

Rodolphe, S ^{[1
]}

机构：

[1] UNIV GRENOBLE 1,SPECTROMETRIE PHYS LAB,F-38402 ST MARTIN DHERES,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 78卷 / 12期

关键词：

D O I：

10.1063/1.360393

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The growth rate and the incorporation efficiency of dopants have been studied in the case of chemical vapor deposition of B-doped polycrystalline diamond films. The deposition rate is found to decrease with the addition of diborane in the gas phase. This is correlated with a modification of the plasma chemistry as observed by emission spectroscopy (decrease in the H/H-2, CH/H, and C-2/H ratios with the addition of diborane). The concentration of boron incorporated in the films is observed to vary with the square of the boron concentration in the gas phase. (C) 1995 American Institute of Physics.

引用

页码：7404 / 7406

页数：3

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