共 50 条
- [2] A STUDY OF GALLIUM-ARSENIDE AND ALUMINUM GALLIUM-ARSENIDE REACTIVE ION ETCHING PARAMETERS JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04): : 1604 - 1605
- [3] REACTIVE ION ETCHING OF GALLIUM-ARSENIDE NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 39 (1-4): : 496 - 499
- [5] INFLUENCE OF ANISOTROPIC ETCHING ON DEEP LEVELS IN THE SURFACE-LAYER OF GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1990, 24 (02): : 175 - 178
- [7] BEHAVIOR OF VANADIUM IN GALLIUM-ARSENIDE SOVIET PHYSICS SEMICONDUCTORS-USSR, 1987, 21 (11): : 1227 - 1229
- [8] ETCHING OF GALLIUM-ARSENIDE IN THE GLOW HYDROGEN DISCHARGE IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII KHIMIYA I KHIMICHESKAYA TEKHNOLOGIYA, 1987, 30 (07): : 50 - 53
- [9] ELLIPSOMETRIC STUDY OF ETCHING OF GALLIUM-ARSENIDE SURFACE JOURNAL OF APPLIED CHEMISTRY OF THE USSR, 1984, 57 (09): : 1969 - 1971
- [10] GALLIUM-ARSENIDE AND ALUMINUM GALLIUM-ARSENIDE REACTIVE ION ETCHING IN BORON-TRICHLORIDE ARGON MIXTURES JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (06): : 1599 - 1605