FORMATION OF THE TRANSITION CONCENTRATION REGION DURING THE GROWTH OF EPITAXIAL LAYERS

被引:0
|
作者
PEROV, AS
PEROVA, VI
OVSYANNIKOV, MI
机构
来源
关键词
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:120 / 121
页数:2
相关论文
共 50 条
  • [21] TRIPYRAMID GROWTH IN EPITAXIAL GERMANIUM LAYERS
    INOUE, M
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (08) : 1232 - &
  • [22] Epitaxial growth and characterization of PbGeEuTe layers
    Osinniy, V.
    Dziawa, P.
    Domukhovski, V.
    Dybko, K.
    Knoff, W.
    Radzynski, T.
    Lusakowski, A.
    Swiatek, K.
    Lusakowska, E.
    Taliashvili, B.
    Boratynski, A.
    Story, T.
    [J]. NARROW GAP SEMICONDUCTORS 2007, 2008, 119 : 73 - 75
  • [23] GROWTH MECHANISM OF GERMANIUM EPITAXIAL LAYERS
    KUROV, GA
    [J]. SOVIET PHYSICS-SOLID STATE, 1962, 4 (02): : 412 - 413
  • [24] Growth and characterisation of GaN epitaxial layers
    Paszkiewicz, R
    Korbutowicz, R
    Radziewicz, D
    Panek, M
    Paszkiewicz, B
    Kozlowski, J
    Boratynski, B
    Tlaczala, M
    Novikov, SV
    [J]. VACUUM, 1998, 50 (1-2) : 211 - 214
  • [25] Surface mound formation during epitaxial growth of CrN(001)
    Zhang, X. Y.
    Gall, D.
    [J]. THIN SOLID FILMS, 2010, 518 (14) : 3813 - 3818
  • [26] Formation of graphite layers during carbon nanotubes growth
    [J]. Honda, S.-I. (honda@ele.eng.osaka-u.ac.jp), 1600, Japan Society of Applied Physics (42):
  • [27] Formation of graphite layers during carbon nanotubes growth
    Baek, YG
    Honda, SI
    Ikuno, T
    Ohkura, S
    Katayama, M
    Hirao, T
    Oura, K
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (2A): : 579 - 581
  • [28] INSITU X-RAY TOPOGRAPHY OF EPITAXIAL GE LAYERS DURING GROWTH
    HAGEN, W
    QUEISSER, HJ
    [J]. APPLIED PHYSICS LETTERS, 1978, 32 (05) : 269 - 270
  • [29] EFFECT OF GROWTH RATE OF EPITAXIAL LAYERS ON THEIR CONCENTRATION PROFILES AND POSITION OF P-N JUNCTION
    LYUBOV, BY
    PLAKHOTN.VT
    [J]. SOVIET PHYSICS CRYSTALLOGRAPHY, USSR, 1970, 15 (03): : 522 - &
  • [30] EFFECT OF VARIOUS GROWTH PARAMETERS ON FORMATION OF PITS AND HILLOCKS ON SURFACE OF EPITAXIAL GAAS LAYERS
    KENNEDY, JK
    POTTER, WD
    [J]. JOURNAL OF CRYSTAL GROWTH, 1973, 19 (02) : 85 - 89