共 50 条
- [21] MULTIPHONON RECOMBINATION VIA DEEP IMPURITY CENTERS FIZIKA TVERDOGO TELA, 1988, 30 (06): : 1793 - 1802
- [22] IMPACT IONIZATION OF DEEP IMPURITY CENTERS IN SEMICONDUCTORS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (11): : 1283 - 1286
- [23] OPTICAL ORIENTATION OF DEEP IMPURITY CENTERS IN SEMICONDUCTORS FIZIKA TVERDOGO TELA, 1984, 26 (02): : 372 - 377
- [24] ELECTRON CAPTURE COEFFICIENTS OF NEGATIVELY CHARGED IMPURITY CENTERS IN GERMANIUM SOVIET PHYSICS SOLID STATE,USSR, 1965, 6 (08): : 2024 - &
- [25] ENERGY-SPECTRUM OF MULTIPLY CHARGED IMPURITY CENTERS IN SEMICONDUCTORS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (10): : 1171 - 1175
- [28] THERMOPHYSICAL STUDIES OF DEEP IMPURITY CENTERS IN SILICON. Journal of Engineering Physics (English Translation of Inzhenerno-Fizicheskii Zhurnal), 1986, 50 (06): : 702 - 706
- [29] Switching diodes based on GaAs with deep impurity centers Instruments and Experimental Techniques, 2009, 52 : 212 - 216
- [30] TIGHT-BINDING METHOD IN DEEP IMPURITY CENTERS FIZIKA TVERDOGO TELA, 1984, 26 (11): : 3467 - 3469