ENHANCED BALLISTIC TRANSPORT IN INGAAS/INALAS HOT-ELECTRON TRANSISTORS

被引：4
|
作者：
CHEN, J
REDDY, UK
MUI, D
PENG, CK
MORKOC, H
机构：
来源：
APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 16期
关键词：
D O I：
10.1063/1.98696
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1254 / 1255
页数：2
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