OBSERVATION OF A DEEP LEVEL DUE TO INDIUM DOPING IN P-TYPE GAAS

被引：1
|
作者：
SMITH, SR [1 ]
EVWARAYE, AO [1 ]
MITCHEL, WC [1 ]
机构：
[1] USAF,WRIGHT AERONAUT LABS,MAT LAB,WRIGHT PATTERSON AFB,OH 45433
来源：
JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 03期
关键词：
D O I：
10.1063/1.343050
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1130 / 1132
页数：3
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