POTENTIAL BARRIER AT THE CAF2-BAF2 INTERFACE

被引：1
|
作者：
MAZUR, P
机构：
[1] Institute of Experimental Physics, University of Wrocław, 50-205 Wrocław
来源：
SURFACE SCIENCE | 1990年 / 231卷 / 1-2期
关键词：
D O I：
10.1016/0039-6028(90)90696-6
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The potential barrier at the interface between CaF2 and BaF2 layers deposited onto a Si(111) substrate is studied using UPS. It is stated that the evaporation of the BaF2 layer onto a composite CaF2/Si substrate decreases the photoelectron threshold by about 0.5 eV. For the multilayer systems the reversible changes of the photoelectron work function are observed after subsequent film evaporation. © 1990.
引用
收藏
页码：95 / 97
页数：3
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