ION-BEAM ETCHING OF SILICON DIOXIDE LAYERS FOR MOS DEVICES

被引：0

|

作者：

MADER, L ^{[1
]}

WIDMANN, D ^{[1
]}

HOPFNER, J ^{[1
]}

机构：

[1] SIEMENS AG,HOFMANN STR 51,D-8000 MUNICH 70,FED REP GER

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1975年 / 122卷 / 03期

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D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

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页码：C86 / C86

页数：1

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