ELECTRICAL-PROPERTIES AND DEFECT MODEL OF TIN-DOPED INDIUM OXIDE LAYERS

被引：582
|
作者：
FRANK, G
KOSTLIN, H
机构：
来源：
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1982年 / 27卷 / 04期
关键词：
D O I：
10.1007/BF00619080
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
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页码：197 / 206
页数：10
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