Electrical properties of tin-doped indium oxide thin films prepared by a dip coating

被引：12

作者：

Seki, Y. ^{[1
]}

Sawada, Y. ^{[1
]}

Wang, M. H. ^{[1
]}

Lei, H. ^{[1
]}

Hoshi, Y. ^{[1
]}

Uchida, T. ^{[1
]}

机构：

[1] Tokyo Polytech Univ, Atsugi, Kanagawa 2430297, Japan

来源：

CERAMICS INTERNATIONAL | 2012年 / 38卷

关键词：

Films; Grain size; Electrical properties; In2O3; ETHANOL SOLUTION; DEPOSITION;

D O I：

10.1016/j.ceramint.2011.05.109

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Indium-tin-oxide (ITO) transparent conducting films were prepared by a dip coating process and heated in air at 1000 degrees C, which is much higher than the temperature applied in a normal dip coating process, where heating occurs at approximately 500 degrees C. This was done in order to enhance grain growth. Heat-resistant substrates silicon, sapphire and YSZ were used. Grain growth (average size = 52 nm), high carrier electron mobility (average value = 46 m(2) V-1 s(-1)) and low resistivity (average value = 3.7 x 10(-4) Omega cm) were all achieved successfully after post-deposition annealing at 600 degrees C in a N2-0.1%H2 atmosphere, for all of the films except the one deposited on a silicon substrate, whose respective values were 28 nm, 19 m(2) V-1 s(-1) and 1.0 x 10(-3) Omega cm. (C) 2011 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

引用

页码：S613 / S616

页数：4

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