THRESHOLD VOLTAGE SHIFT OF N-CHANNEL SI-GATE MOSFETS

被引：5
|
作者：
HORIUCHI, S [1 ]
机构：
[1] TOKYO SHIBAURA ELECT CO LTD,TOSHIBA RES & DEV CTR,KAWASAKI 210,JAPAN
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1975年 / 22卷 / 11期
关键词：
D O I：
10.1109/T-ED.1975.18265
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1038 / 1043
页数：6
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