EFFECTS OF HIGH-TEMPERATURE HYDROGEN ANNEALING ON N-CHANNEL SI-GATE MNOS DEVICES

被引：14

|

作者：

YATSUDA, Y

MINAMI, S

KONDO, R

HAGIWARA, T

ITOH, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷

关键词：

D O I：

10.7567/JJAPS.19S1.219

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：219 / 224

页数：6

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