ORIENTATION EFFECT IN ELECTRONIC-PROPERTIES OF SILICON WIRES

被引：27
|
作者：
FILONOV, AB
PETROV, GV
NOVIKOV, VA
BORISENKO, VE
机构：
[1] Belarusian State University of Informatics and Radioelectronics, Minsk 220027
来源：
APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 08期
关键词：
D O I：
10.1063/1.114458
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Electronic properties of (100), (110), and (111) oriented H-terminated silicon quantum-size wires have been calculated within the self-consistent LCAO method. The quantum confinement induced direct band gap only appears in the (100) wires. Surface silicon d and p electrons are found to be responsible for the bottom of the conduction band while the top of the valence band are formed by p electrons of the core atoms. Possible reconstruction of the wire surface is discussed. (C) 1995 American Institute of Physics.
引用
收藏
页码：1090 / 1091
页数：2
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