RESONANT-TUNNELING DEVICES - EFFECT OF SCATTERING

被引：0
|
作者：
DATTA, S [1 ]
KLIMECK, G [1 ]
LAKE, RK [1 ]
ANANTRAM, MP [1 ]
机构：
[1] PURDUE UNIV,SCH ELECT ENGN,W LAFAYETTE,IN 47907
来源：
COMPOUND SEMICONDUCTORS 1994 | 1995年 / 141期
关键词：
D O I：
暂无
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The non-equilibrium Green's function (NEGF) formalism provides a general framework for the simulation of quantum devices including electron-phonon and electron-electron interactions. We have used this approach to study the effect of phonon scattering on the de and ac response of resonant tunneling diodes. In this talk we will discuss the basic results using a simple physical picture.
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页码：775 / 780
页数：6
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