OPERATIONAL SILICON BIPOLAR INVERSION-CHANNEL FIELD-EFFECT TRANSISTOR (BICFET)

被引：10
|
作者：
MORAVVEJFARSHI, MK
GREEN, MA
机构：
来源：
IEEE ELECTRON DEVICE LETTERS | 1986年 / 7卷 / 09期
关键词：
D O I：
10.1109/EDL.1986.26456
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：513 / 515
页数：3
相关论文
共 50 条
  • [21] Inversion-channel GaN metal-oxide-semiconductor field-effect transistor with atomic-layer-deposited Al2O3 as gate dielectric
    Chang, Y. C.
    Chang, W. H.
    Chiu, H. C.
    Tung, L. T.
    Lee, C. H.
    Shiu, K. H.
    Hong, M.
    Kwo, J.
    Hong, J. M.
    Tsai, C. C.
    [J]. APPLIED PHYSICS LETTERS, 2008, 93 (05)
  • [22] GaN metal-oxide-semiconductor field-effect transistor inversion channel mobility modeling
    Perez-Tomas, A.
    Placidi, M.
    Perpina, X.
    Constant, A.
    Godignon, P.
    Jorda, X.
    Brosselard, P.
    Millan, J.
    [J]. JOURNAL OF APPLIED PHYSICS, 2009, 105 (11)
  • [23] INSULATED-GATE FIELD-EFFECT TRANSISTOR - A BIPOLAR TRANSISTOR IN DISGUISE.
    Johnson, E.O.
    [J]. 1600, (34):
  • [24] Long-channel field-effect transistor with short-channel transistor properties
    Karimov, A. V.
    Yodgorova, D. M.
    Abdulkhaev, O. A.
    [J]. SEMICONDUCTORS, 2014, 48 (04) : 481 - 486
  • [25] Long-channel field-effect transistor with short-channel transistor properties
    A. V. Karimov
    D. M. Yodgorova
    O. A. Abdulkhaev
    [J]. Semiconductors, 2014, 48 : 481 - 486
  • [26] Fully depleted nanowire field-effect transistor in inversion mode
    Hayden, Oliver
    Bjoerk, Mikael T.
    Schmid, Heinz
    Riel, Heike
    Drechsler, Ute
    Karg, Siegfried F.
    Loertscher, Emanuel
    Riess, Walter
    [J]. SMALL, 2007, 3 (02) : 230 - 234
  • [27] CARRIER CONCENTRATION IN INVERSION LAYER OF A MOS FIELD-EFFECT TRANSISTOR
    LAUR, J
    JAYADEVAIAH, TS
    [J]. SOLID-STATE ELECTRONICS, 1973, 16 (05) : 644 - 646
  • [28] SILICON FIELD-EFFECT TRANSISTOR BASED ON QUANTUM TUNNELING
    TUCKER, JR
    WANG, CL
    CARNEY, PS
    [J]. APPLIED PHYSICS LETTERS, 1994, 65 (05) : 618 - 620
  • [29] AN IONIC LIQUID-CHANNEL FIELD-EFFECT TRANSISTOR
    GAJAR, SA
    GEIS, MW
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1992, 139 (10) : 2833 - 2840
  • [30] AN IONIC LIQUID-CHANNEL FIELD-EFFECT TRANSISTOR
    GAJAR, SA
    GEIS, MW
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (11) : 2649 - 2650
12345