FORMATION OF CARBON-EXCESS SIC FROM PYROLYSIS OF CH3SICL3

被引：20

作者：

KOBAYASHI, F ^{[1
]}

IKAWA, K ^{[1
]}

IWAMOTO, K ^{[1
]}

机构：

[1] JAPAN ATOM ENERGY RES INST,NAKA,IBARAKI,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1975年 / 28卷 / 03期

关键词：

D O I：

10.1016/0022-0248(75)90079-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：395 / 396

页数：2

共 50 条

[1] FORMATION OF BETA-SIC FROM PYROLYSIS OF CH3SICL3 IN HYDROGEN
VANKEMENADE, AW
STEMFOORT, CF
[J]. JOURNAL OF CRYSTAL GROWTH, 1972, 12 (01) : 13 - +
[2] Multiple rates in the deposition of SiC from CH3SiCl3
Papasouliotis, GD
Sotirchos, SV
[J]. PROCEEDINGS OF THE THIRTEENTH INTERNATIONAL CONFERENCE ON CHEMICAL VAPOR DEPOSITION, 1996, 96 (05): : 645 - 650
[3] MODEL STUDIES ON THE DISPOSAL OF WASTE PRODUCTS RESULTING FROM THE PYROLYSIS OF CH3SICL3 IN CVD PROCESS
KWATERA, A
[J]. CERAMICS INTERNATIONAL, 1990, 16 (05) : 273 - 280
[4] MICROWAVE INVESTIGATIONS OF HSICL3 AND CH3SICL3
MOCKLER, R
BAILEY, JH
GORDY, W
[J]. PHYSICAL REVIEW, 1952, 87 (01): : 172 - 172
[5] MICROWAVE SPECTRA AND MOLECULAR STRUCTURES OF HSICL3, CH3SICL3, AND (CH3)3SICL
MOCKLER, RC
BAILEY, JH
GORDY, W
[J]. JOURNAL OF CHEMICAL PHYSICS, 1953, 21 (10): : 1710 - 1713
[6] Influence of CH3SiCl3 consistency on growth process of SiC film by kinetic monte carlo method
Cuixia Liu
Yanqing Yang
Xian Luo
[J]. Journal of Wuhan University of Technology-Mater. Sci. Ed., 2012, 27 : 871 - 875
[7] OXIDATION-KINETICS OF SIC DEPOSITED FROM CH3SICL3/H2 UNDER CVI CONDITIONS
FILIPUZZI, L
NASLAIN, R
JAUSSAUD, C
[J]. JOURNAL OF MATERIALS SCIENCE, 1992, 27 (12) : 3330 - 3334
[8] Influence of CH3SiCl3 consistency on growth process of SiC film by kinetic monte carlo method
Liu Cuixia
Yang Yanqing
Luo Xian
[J]. JOURNAL OF WUHAN UNIVERSITY OF TECHNOLOGY-MATERIALS SCIENCE EDITION, 2012, 27 (05): : 871 - 875
[9] Influence of CH3SiCl3 Consistency on Growth Process of SiC Film by Kinetic Monte Carlo Method
刘翠霞
[J]. Journal of Wuhan University of Technology(Materials Science), 2012, (05) : 871 - 875
[10] Crystallographic characteristics of polycrystalline beta-SiC deposited from CH3SiCl3 in cold or hot wall reactor
Honjo, K
Ado, K
Kageyama, H
Nakamura, O
[J]. PROCEEDINGS OF THE THIRTEENTH INTERNATIONAL CONFERENCE ON CHEMICAL VAPOR DEPOSITION, 1996, 96 (05): : 739 - 744

← 1 2 3 4 5 →