Crystallographic characteristics of polycrystalline beta-SiC deposited from CH3SiCl3 in cold or hot wall reactor

Polycrystalline silicon carbide (3C with stacking disordered) was deposited from CH3SiCl3 -H-2 -Ar system with various H-2 concentrations at 1200 degrees C in a cold wall or a hot wall reactor on graphite plates and the preferred orientation and crystallite size were examined. SiC crystallites orient preferentially with their [111] direction vertical to the substrate surface at a high and a low H-2 concentration regions, being [110] oriented at the Intervening region with smaller crystallite size. The polarities of the oriented [111] direction were determined by x-ray diffraction utilizing anomalous dispersion. These results in the cold wall case were compared with those in the hot wall case.