OPTICAL ABSORPTION PHOTOCONDUCTIVITY AND P-N JUNCTIONS IN CADMIUM TELLURIDE

被引：1

作者：

VUL, BM

VAVILOV, VS

PLOTNIKOV, AF

SOKOLOVA, AA

CHAPNIN, VA

机构：

来源：

REVUE DE PHYSIQUE APPLIQUEE | 1966年 / 1卷 / 03期

关键词：

D O I：

10.1051/rphysap:0196600103021700

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：217 / +

页数：1

共 50 条

[21] STUDIES ON OPTICAL COUPLING BETWEEN SILICON P-N JUNCTIONS
HAITZ, RH
SOLID-STATE ELECTRONICS, 1965, 8 (04) : 417 - &
[22] PHOTOCONDUCTIVITY FROM FREE CARRIER ABSORPTION IN MERCURY-CADMIUM-TELLURIDE
WEBER, B
KULPA, SM
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (03) : 347 - 350
[23] THE THEORY OF P-N JUNCTIONS IN SEMICONDUCTORS AND P-N JUNCTION TRANSISTORS
SHOCKLEY, W
BELL SYSTEM TECHNICAL JOURNAL, 1949, 28 (03): : 435 - 489
[24] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS
SAH, CT
NOYCE, RN
SHOCKLEY, W
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09): : 1228 - 1243
[25] ON THE CAPACITIVE CHARACTERISTICS OF P-N JUNCTIONS
VUL, BM
SOVIET PHYSICS-SOLID STATE, 1961, 3 (01): : 148 - 149
[26] Implanted p-n junctions in GaN
Dept. of Mat. Sci. and Engineering, University of Florida, Gainesville, FL 32611, United States
不详
不详
不详
不详
Solid-State Electron., 7 (1235-1238):
[27] ON THE DELINEATION OF P-N JUNCTIONS IN SILICON
ILES, PA
COPPEN, PJ
JOURNAL OF APPLIED PHYSICS, 1958, 29 (10) : 1514 - 1514
[28] ANOMOLOUS RECOMBINATIONS IN P-N JUNCTIONS
BRIENT, SJ
WILSON, CL
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1970, 15 (03): : 379 - &
[29] p-n junctions in molybdenum ditelluride
Bernede, JC
Kettaf, M
Khelil, A
Spiesser, M
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1996, 157 (01): : 205 - 209
[30] MULTIPLICATION IN SILICON P-N JUNCTIONS
MOLL, JL
PHYSICAL REVIEW, 1965, 137 (3A): : A938 - &