PREPARATION OF TIN FILMS BY ELECTRON-CYCLOTRON RESONANCE PLASMA CHEMICAL VAPOR-DEPOSITION

被引：24

作者：

AKAHORI, T ^{[1
]}

TANIHARA, A ^{[1
]}

TANO, M ^{[1
]}

机构：

[1] SUMITOMO MET IND LTD, DIV ELECTR, OSAKA 554, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1991年 / 30卷 / 12B期

关键词：

ECR; PLASMA; CVD; BARRIER METAL; TIN;

D O I：

10.1143/JJAP.30.3558

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

TiN film is used in the ultra large scale integrated circuit (ULSI) process as a diffusion barrier. Conventional TiN films are deposited by reactive sputtering or by rapid thermal nitridation (RTN) of sputtered titanium layers. Our research group has developed a new ECR (electron cyclotron resonance) plasma CVD (chemical vapor deposition) system capable of depositing metal films. By using this system, TiN films were prepared using TiCl4 and N2 as material gases. It is proven that the films have many advantages: low resistivity, low stress, high barrier property, thick deposition on the bottom of the high aspect ratio's hole and low chlorine concentration in comparison with LPCVD (low pressure chemical vapor deposition) TiN film.

引用

页码：3558 / 3561

页数：4

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