ORIENTATION EFFECT OF SELF-ALIGNED SOURCE DRAIN PLANAR GAAS SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS

被引：28
|
作者：
YOKOYAMA, N
ONODERA, H
OHNISHI, T
SHIBATOMI, A
机构：
来源：
APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 03期
关键词：
D O I：
10.1063/1.93911
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：270 / 271
页数：2
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