ORIENTATION EFFECT OF SELF-ALIGNED SOURCE DRAIN PLANAR GAAS SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS

被引：28

|

作者：

YOKOYAMA, N

ONODERA, H

OHNISHI, T

SHIBATOMI, A

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 03期

关键词：

D O I：

10.1063/1.93911

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：270 / 271

页数：2

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