THE EFFECTS OF SUBSTRATE GETTERING ON GAAS-MESFET PERFORMANCE

被引：5
|
作者：
WANG, FC [1 ]
BUJATTI, M [1 ]
机构：
[1] HEWLETT PACKARD CO, DIV MICROWAVE TECHNOL, SANTA ROSA, CA 95401 USA
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 12期
关键词：
D O I：
10.1109/T-ED.1985.22424
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：2839 / 2843
页数：5
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